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R
N N-CHANNEL MOSFET
JCS840
MAIN CHARACTERISTICS
Package
ID VDSS Rdson @Vgs=10V Qg
UPS
8A 500 V 0.8 59 nC
APPLICATIONS
High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low CBrss (typical 35pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product
B
CBrss ( 35pF) dv/dt RoHS
B
ORDER MESSAGE
Order codes JCS840S-O-S-N-B JCS840B-O-B-N-B JCS840C-O-C-N-B JCS840F-O-F-N-B TO-263 TO-262 TO-220C TO-220MF Halogen Free NO NO NO NO Device Weight 1.37 g(typ) 1.71 g(typ) 2.15 g(typ) 2.20 g(typ) Marking JCS840S JCS840B JCS840C JCS840F Package Packaging Tube Tube Tube Tube
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ABSOLUTE RATINGS (Tc=25)
JCS840S/B/C 500 8.0 5.1 32
B
JCS840F Unit V 8.0* 5.1* 32* A A A V
Parameter Drain-Source Voltage Drain Current
Symbol VBDSS
B
Value
-continuous
B
IBD T=25 T=100 IBDM
1 Drain Current - pulse note 1 Gate-Source Voltage 2 Single Pulsed Avalanche Energynote 2 1 Avalanche Currentnote 1
VBGSS
B
30
EBAS
B
320
mJ
IBAR
B
8.0 13.4
A mJ
1 EBAR Repetitive Avalanche Currentnote 1
B
3
dv/dt PBD TC=25 -Derate above 25
B B B
3.5 134 44
V/ns W
Peak Diode Recovery dv/dtnote 3
Power Dissipation
1.08
0.35
W/
Operating and Storage Temperature Range Maximum Lead Temperature Soldering Purposes for
TBJTBSTG
B B
-55+150
TBL
B
300
* *Drain current limited by maximum junction temperature
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Tests conditions Min Typ Max Units Parameter Symbol
ELECTRICAL CHARACTERISTICS
Off -Characteristics Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input capacitance Output capacitance Reverse transfer capacitance VBGS(th)
B
BVBDSS
B
IBD=250A, VBGS=0V
B B
500
-
-
V
BVBDSS/ IBD=250A, referenced to 25 TBJ
B B B
-
0.55
-
V/
IBDSS
B
VBDS=500V,VBGS=0V, TBC=25
B B B
-
-
10 100 100
A A nA
VBDS=400V,
B
TBC=125
B
IBGSSF
B
VBDS=0V,
B
VBGS =30V
B
IBGSSR
B
VBDS=0V,
B
VBGS =-30V
B
-
-
-100
nA
VBDS = VBGS ,
B B
IBD=250A
B
2.0
-
4.0
V
RBDS(ON)
B
VBGS =10V ,
B
IBD=4.0A
B
-
0.65 0.8
gBfs
B
VBDS = 40V, IBD=4.0Anote 4
B B
-
7.3
-
S
Dynamic Characteristics CBiss
B
CBoss
B
VBDS=25V, VBGS =0V, f=1.0MHBZ
B B B
-
1400 1800 pF 145 190 35 45 pF pF
CBrss
B
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tBd(on)
B
ELECTRICAL CHARACTERISTICS
Switching Characteristics Turn-On delay time Turn-On rise time Turn-Off delay time Turn-Off Fall time Total Gate Charge Gate-Source charge Gate-Drain charge tBr
B
VBDD=250V,IBD=8.0A,RBG=25 note 45
B B B
-
22
55
ns ns ns ns nC nC nC
65 140 125 260 75 160 59 6.5 28 70 -
tBd(off)
B
tBf
B
QBg
B
QBgs
B
QBgd
B
VBDS =400V , IBD=8.0A VBGS =10V note 45
B B B
-
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain -Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse recovery time Reverse recovery charge VBSD
B
IBS
B
-
-
8.0
A
IBSM
B
-
-
32
A
VBGS=0V,
B
IBS=8.0A
B
-
-
1.4
V
tBrr
B
QBrr
B
VBGS=0V, IBS=8.0A dIBF/dt=100A/s (note 4)
B B B
-
390 4.2
-
ns C
THERMAL CHARACTERISTIC
Max JCS840S/B/C 0.93 62.5 JCS840F 2.86 62.5 Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
1 2 L=9.0mH, IBAS=8.0A, VBDD=50V,
B B
Symbol Rth(j-c) Rth(j-A)
Unit /W /W
Notes: 1 Pulse width limited by maximum junction RBG=25 ,
B
temperature 2L=9.0mH, IBAS=8.0A, VBDD=50V, RBG=25 ,Starting
B B B
TBJ=25
B
3IBSD 8.0A,di/dt 200A/s,VDDBVBDSS,
B B
TBJ=25
B
TBJ=25
B
3 IBSD 8.0A,di/dt 200A/s,VDDBVBDSS, Starting
B B
4300s,2 5
TBJ=25
B
4Pulse TestPulse Width 300s,Duty Cycle2 5Essentially independent of operating temperature
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ELECTRICAL CHARACTERISTICS (curves) Transfer Characteristics
On-Region Characteristics
Top VGS 15V 10V 8V 7V 6.5V 6V 5.5V Bottom 5V
10
ID [A]
I D [A]
10
150
1
Notes 1. 250s pulse test 2. TC=25
0.1
25
Notes 1.250s pulse test 2.VDS=40V
6 8
1
2
4
1
VDS[V]
10
V GS [V]
On-Resistance Variation vs. Drain Current and Gate Voltage
1.00
Body Diode Forward Voltage Variation vs. Source Current and Temperature
10
0.95
R DS (on ) [ ]
VGS=10V
I DR [A]
0.90 0.85 0.80 0.75 0.70 0.65 0 5
25
VGS=20V
1
150
T Note j=25
10 15
Notes 1. 250s pulse test 2. VGS=0V
0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
I D [A]
0.1 0.4
0.5
0.6
0.7
V SD [V]
Capacitance Characteristics
12
Gate Charge Characteristics
10
VDS=400V VDS=250V
VGS Gate Source Voltage[V]
8
VDS=100V
6
4
2
0
0
10
20
30
40
50
60
Qg Toltal Gate Charge [nC]
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On-Resistance Variation vs. Temperature
3.0
ELECTRICAL CHARACTERISTICS (curves) Breakdown Voltage Variation vs. Temperature
1.2
BV DS (Normalized)
1.1
RD (on ) (Normalized)
Notes 1. VGS=0V 2. ID=250A
-50 -25 0 25 50 75 100 125 150
2.5
2.0
1.0
1.5
1.0
0.9
0.5
Notes 1. VGS=10V 2. ID=4.0A
-50 -25 0 25 50 75 100 125 150
0.8 -75
0.0 -75
T j [ ]
T j [ ]
Maximum Safe Operating Area For JCS840S/B/C
Maximum Safe Operating Area For JCS840F
Maximum Drain Current vs. Case Temperature
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Transient Thermal Response Curve For JCS840S/B/C
ELECTRICAL CHARACTERISTICS (curves)
Transient Thermal Response Curve For JCS840F
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Unitmm
PACKAGE MECHANICAL DATA TO-262
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Unitmm
PACKAGE MECHANICAL DATA TO-263
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Unitmm
PACKAGE MECHANICAL DATA TO-220C
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Unitmm
PACKAGE MECHANICAL DATA TO-220MF
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NOTE
1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice.
1. 2.
3. 4.
99 132013 86-432-64678411 86-432-64665812 H .hwdz.com.cnU
TUwww
CONTACT
JILIN SINO-MICROELECTRONICS CO., LTD. ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel 86-432-64678411 Fax86-432-64665812 Web SiteH .hwdz.com.cnU
TUwww TH
TH
99 132013 86-432-64675588 64675688 64678411-3098/3099 : 86-432-64671533
MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64675588 64675688 64678411-3098/3099 Fax: 86-432-64671533
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